BF999 nov-08-2002 1 silicon n-channel mosfet triode for high-frequency stages up to 300 mhz preferably in fm applications 1 2 3 vps05161 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BF999 lbs 1 = g 2 = d 3 = s sot23 maximum ratings parameter symbol value unit drain-source voltage v ds 20 v drain current i d 30 ma gate-source peak current i gsm 10 ma total power dissipation , t s 76 c p tot 200 mw storage temperature t stg -55 ... 150 c channel temperature t ch 150 thermal resistance channel - soldering point 1) r thchs 370 k/w 1 for calculation of r thja please refer to application note thermal resistance
BF999 nov-08-2002 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics drain-source breakdown voltage i d = 10 a, - v gs = 4 v v (br)ds 20 - - v gate-source breakdown voltage i gs = 10 ma, v ds = 0 v (br)gss 6.5 - 12 gate-source leakage current v gs = 5 v, v ds = 0 i gss - - 50 na drain current v ds = 10 v, v gs = 0 i dss 5 - 18 ma gate-source pinch-off voltage v ds = 10 v, i d = 20 a - v gs (p) - - 2.5 v ac characteristics forward tranconductance v ds = 10 v, i d = 10 ma g fs 14 16 - ms gate input capacitance v ds = 10 v, i d = 10 ma, f = 1 mhz c gss - 2.5 - pf reverse tranfer capacitance v ds = 10 v, i d = 10 ma, f = 1 mhz c dg - 25 - ff output capacitance v ds = 10 v, i d = 10 ma, f = 1 mhz c dss - 1 - pf power gain v ds = 10 v, i d = 10 ma, f = 200 mhz g p - 25 - db noise figure v ds = 10 v, i d = 10 ma, f = 200 mhz f - 1 -
BF999 nov-08-2002 3 output characteristics i d = f ( v ds ) 0 0 eht07308 bf 999 d ds v 20 v gs = 5 10 15 20 ma 25 51015v v 0.6 v 0.4 v 0.2 v 0v -0.2 v -0.4 v v -0.6 0.8 total power dissipation p tot = f ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot gate transconductance g fs = f ( v gs ) -1 0 eht07309 bf 999 g fs gs v 012v3 5 10 15 ms 20 drain current i d = f ( v gs ) -1 0 eht07310 bf 999 gs v d 10 20 30 ma 01v2
BF999 nov-08-2002 4 gate input capacitance c gss = f ( v gs ) -2 0 eht07311 bf 999 c gss gs v -1 01 v 1 2 pf 3 output capacitance c dss = f ( v ds ) 0 0.0 eht07312 bf 999 c dss ds v 5 10 15 v 0.5 1.0 1.5 pf 2.0 reverse transfer capacitance c dg = f ( v ds ) 0 0 eht07313 bf 999 c dg ds v 5 10 15 v 50 100 150 ff 200 gate input admittance y 11s (common-source) 0 0 eht07314 bf 999 b 11s g 11s 50 100 200 300 400 500 600 700 = 800 f 123ms4 2 4 6 8 10 12 ms 14 mhz mhz mhz mhz mhz mhz mhz mhz mhz
BF999 nov-08-2002 5 gate forward transfer admittance y 21s (common-source) 4 -15 eht07315 bf 999 b 21s g 21s = 800 f 6 8 10 12 14 ms 16 -10 -5 ms 0 700 600 500 400 300 200 100 50 mhz mhz mhz mhz mhz mhz mhz mhz mhz output admittance y 22s (common-source) 0 0 eht07316 bf 999 b 22s g 0.1 0.2 0.3 0.4 ms 0.5 4 5 ms 22s 50 100 200 300 400 500 600 700 = 800 3 2 1 f mhz mhz mhz mhz mhz mhz mhz mhz mhz test circuit for power gain and noise figure f = 200 mhz ehm07024 dr input 60 ? 60 output ? 15 pf 1 nf 1 nf bb515 ? 270 k ? 270 k v ds v tun v tun v g1s 270 k ? bb515 1 nf 15 pf 1 nf
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